Ta2O5

Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

1 min read · Wed, Apr 26 2017

Mrinal K. Hota, et al., "Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics." A CS applied materials & interfaces 9 (26), 2017, 21856. We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a